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The DMP4026LK3-13 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and a maximum continuous drain current of -40A at +25°C case temperature. The device exhibits a low on-state resistance of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Packaged in a TO252 (DPAK) surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the selected package variant matches the thermal requirements of the target application design.
Select this component for applications requiring robust P-channel switching within a 40V system. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient conditions. Verify that the gate drive voltage levels are sufficient to achieve the specified low on-resistance thresholds for optimal efficiency.
This part belongs to the DMP4026 series of P-channel MOSFETs designed for general-purpose power switching. It utilizes silicon technology housed in a standard TO252 lead frame package. The product line emphasizes low input/output leakage and fast switching speeds suitable for modern electronic control architectures.
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and thermal specifications.
Standard versions are not explicitly designated for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly.
The device can withstand a pulsed drain current of -160A, defined by a 10µs pulse duration with a 1% duty cycle.