DMP4026LSDQ-13

Overview

The DMP4026LSDQ-13 is a dual P-channel enhancement mode power MOSFET manufactured by Diodes Incorporated. It features an isolated configuration within an SOIC-8 surface-mount package. The device supports a drain-source voltage of 40V and delivers a continuous drain current of 5.8A at 25°C. Key electrical parameters include a maximum on-resistance of 45mΩ at Vgs = -10V and 65mΩ at Vgs = -4.5V, with a typical gate charge of 14nC. It operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Dual P-channel architecture providing two independent switches in a single compact package
• Low on-state resistance optimized for high-efficiency power management applications
• Qualified to AEC-Q101 standards ensuring high reliability for automotive environments
• Enhanced switching speed combined with low input capacitance for reduced switching losses

Applications

• High-side load switches in portable electronic devices
• Power path management circuits
• DC-DC converter output stages
• Automotive infotainment and body control modules

Procurement Notes

Verify the specific suffix 'Q' against the manufacturer's official documentation to confirm it denotes automotive-grade qualification or specific tape-and-reel packaging variations. Ensure the ordering part number matches the exact datasheet revision required for your design. Confirm RoHS compliance status and lead-free material declarations directly with the supplier before finalizing procurement contracts.

Selection Notes

Select this component when a dual P-channel solution is required in an SOIC-8 footprint to save board space. It is suitable for designs needing 40V blocking capability with moderate current handling up to 5.8A. Consider the thermal performance and on-resistance values at your specific drive voltage (e.g., 4.5V vs 10V) to ensure adequate efficiency. Verify that the package dimensions align with your PCB land pattern requirements.

Part Context

This part belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. These components are engineered to minimize on-state resistance while maintaining superior switching performance. The series is widely used in consumer electronics and automotive systems where efficient power switching and compact packaging are critical design constraints.

Replacement Considerations

Direct substitutes must match the 40V rating, dual P-channel configuration, and SOIC-8 package. Verify that alternative parts meet or exceed the 5.8A current rating and 45mΩ on-resistance specifications. Check for equivalent AEC-Q101 qualification if automotive reliability is required.