DMP4026LSSQ-13

$0.22

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:65fca6055720 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2083 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP4026LSSQ-13

Overview

The DMP4026LSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and a maximum continuous drain current of -7.2A at +25°C. The device offers a low on-resistance of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
100% Unclamped Inductive Switch (UIS) tested in production
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Motor controls
Backlighting
DC-DC converters
Printer equipment

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable automotive quality standards and regulatory requirements for your intended application before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring robust P-channel switching with high avalanche energy ratings. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance and switching speed characteristics.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities, ensuring consistent quality and traceability for critical automotive electronic systems and components.

Replacement Considerations

Check pinout compatibility and thermal resistance values against existing designs. Verify that alternative parts meet the same AEC-Q101 qualification and UIS testing requirements for direct substitution in automotive environments.