DMP4026SFGQ-13

$0.24

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fb8cab64baad Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP4026SFGQ-13

Overview

The DMP4026SFGQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of -40V and a maximum continuous drain current (ID) of -28A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 25mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Total gate charge (Qg) is 48nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Low RDS(ON) minimizes conduction losses
Fast switching speed reduces switching losses
100% Unclamped Inductive Switch (UIS) tested in production

Applications

Motor controls
Backlighting
DC-DC converters
Printer equipment

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 2 and RoHS 3 directives, ensuring it is halogen-free and antimony-free. Cross-reference the date code markings against the official key to validate manufacturing year and week. Ensure compliance with IATF 16949 facility requirements if the application demands specific change control protocols.

Selection Notes

Select this component when designing circuits requiring a -40V P-channel MOSFET with low on-resistance characteristics suitable for power management. The PowerDI3333-8 package offers a compact footprint ideal for space-constrained PCB layouts. Consider the thermal resistance values and junction-to-case specifications for adequate heat dissipation in high-current scenarios. Verify gate drive voltage compatibility, noting the distinct RDS(ON) performance at -10V versus -4.5V logic levels.

Part Context

This part belongs to the DMP4026SFGQ series of automotive-grade P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to meet stringent automotive reliability standards. The component is part of a broader family of surface-mount transistors optimized for efficiency and durability in demanding electronic environments.