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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMP4026SFVW-7 is a 40V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -40V and a continuous drain current (ID) of -49A at TC = +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 11.1mΩ at VGS = -10V and 14.6mΩ at VGS = -4.5V, both measured at ID = -3A. Packaged in a PowerDI3333-8 surface-mount format, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Low RDS(ON) ensures minimal on-state losses for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products.
- Occupies just 33% of the board area occupied by SO-8 packages.
- 100% unclamped inductive switch (UIS) tested in production.
Applications
- Reverse-polarity protections
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packing quantity as defined in the manufacturer's ordering information. Confirm that the component meets RoHS compliance requirements and is halogen-free if required by your design specifications. Ensure the selected part number matches the exact thermal and electrical ratings needed for your application environment.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package provides significant board area savings compared to traditional SO-8 packages while maintaining robust thermal performance. Consider the gate threshold voltage and total gate charge characteristics for driving compatibility in your switching circuit applications.
Part Context
This component belongs to the DMP40 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI3333-8 (SWP) Type UX package. The product line emphasizes miniaturization and thermal efficiency, targeting modern electronic systems where footprint reduction and heat dissipation are critical design constraints.
Replacement Considerations
DMP4026SFVW-13: Identical electrical specifications and package; differs only in packing quantity (3000 units per reel).
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is -198A, based on a 10µs pulse duration with a 1% duty cycle.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly, as standard parts may not include these specific certifications.
