DMP4047LFDEQ-7

$0.46

Description：MOSFET BVDSS: 31V~40V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:654c8137c224 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1265 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP4047LFDEQ-7

Overview

The DMP4047LFDEQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage and a maximum continuous drain current of -6.5A at +25°C. The device exhibits a low on-resistance of 34mΩ at VGS = -10V and 50mΩ at VGS = -4.5V. Packaged in a U-DFN2020-6 case with a 0.6mm profile, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Manufactured in IATF 16949 certified facilities
Compliant with RoHS directives and halogen/antimony free
Features a 0.6mm low profile and compact PCB footprint

Applications

General purpose interfacing switch
Load switching
Battery management application
Power management functions

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) to confirm the required tape and reel quantity. Confirm that the U-DFN2020-6 package dimensions align with the target PCB layout. Ensure the design accounts for the thermal resistance values provided for both minimum pad layouts and copper-heavy substrates.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET with a -40V rating is required. The low gate threshold voltage facilitates easy drive compatibility. Consider the 0.6mm height constraint if vertical space is limited. Verify that the continuous drain current requirements do not exceed the specified limits under the operating ambient temperature conditions.

Part Context

This part belongs to the DMP series of power MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 surface mount package. The product line is specifically engineered to meet the stringent reliability and quality standards demanded by the automotive electronics industry.