DMP45H150DHE-13

$0.59

Description：MOSFET P-CH 450V 250MA SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cb8215da9b79 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 450V 250MA SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：59.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：13.9W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

Download product information

DMP45H150DHE-13

Overview

The DMP45H150DHE-13 is a single-channel, P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of -450V and a continuous drain current of -0.1A at +25°C. The device exhibits a static drain-source on-resistance of up to 150Ω at VGS = -10V and ID = -50mA. Total power dissipation reaches 2.1W at +25°C, with an operating junction temperature range from -55°C to +150°C. It utilizes a SOT223 surface-mount package.

Feature Summary

Provides efficient power handling capability with high input impedance.
Eliminates risks associated with thermal runaway and thermally induced secondary breakdown.
Designed for low gate drive requirements and fast switching speeds.
Features low input capacitance to support high-voltage switching applications.

Applications

Load switching circuits
Uninterrupted power supplies (UPS)
Telecom high-voltage switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives, including halogen and antimony-free status, if required for your manufacturing process. Ensure the selected part matches the exact datasheet revision DS39212 Rev. 5 - 2 for accurate electrical parameters.

Selection Notes

Select this component for applications requiring high-voltage isolation in a compact SOT223 footprint. Evaluate the 150Ω on-resistance against load current requirements to ensure acceptable conduction losses. Consider the 2.1W power dissipation limit and thermal resistance when designing heat management solutions for dense PCB layouts.

Part Context

This device belongs to the DMP45H series of high-voltage P-channel MOSFETs from Diodes Incorporated. It is engineered specifically for telecom infrastructure and general-purpose high-voltage switching environments where reliability and thermal stability are critical design constraints.

Replacement Considerations

Cross-reference with other DMP45H series variants such as DMP45H21DHE or DMP45H4D9HK3. Verify pinout compatibility and ensure replacement parts meet identical voltage and current ratings before integration.