DMP45H4D9HK3-13

$1.04

Description：MOSFET P-CH 450V 4.7A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:971ab6ef2a64 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 450V 4.7A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.7 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：564 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMP45H4D9HK3-13

Overview

The DMP45H4D9HK3-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage of -450V and a maximum on-resistance of 4.9Ω at VGS = -10V. The device supports a continuous drain current of -4.7A at +25°C and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Features low input capacitance and low input/output leakage characteristics.
Constructed with lead-free finish, RoHS compliant materials, and halogen and antimony free green compound.

Applications

Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets the required environmental standards, including RoHS compliance and Halogen/Antimony-free definitions, as specified in the manufacturer's documentation before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high voltage isolation up to 450V in a surface-mount format. Ensure the gate drive circuitry can supply sufficient negative voltage to achieve the rated on-resistance. Evaluate thermal management requirements based on the specified power dissipation limits and thermal resistance values under expected operating conditions.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a standard TO252 (DPAK) surface mount package designed for efficient heat dissipation. The product is marked with 'Green' indicators to denote its compliance with specific environmental restrictions regarding hazardous substances.