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The DMP57D5UV is a dual P-channel enhancement mode MOSFET in an SOT-563 package. It features a drain-source voltage of -50V and continuous drain current of -160mA per channel. The static drain-source on-resistance is 4.6Ω at VGS=-4V and 6Ω at VGS=-2.5V. Total power dissipation is 400mW with a thermal resistance of 313°C/W. Operating temperature ranges from -55°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated distributors. Confirm the datasheet revision matches DS31540 Rev. 4-3. Ensure storage conditions comply with J-STD-020D Level 1 moisture sensitivity requirements before soldering.
Select this component for low-current dual P-channel switching needs. Verify that the 4.6Ω on-resistance meets system efficiency targets. Confirm the SOT-563 footprint fits the PCB layout constraints.
This device belongs to the DMP series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon gate technology within a molded plastic case designed for automated surface-mount assembly processes.
The datasheet explicitly recommends using the DMP56D0UV as the replacement part. Verify pin compatibility and electrical specifications before substitution.
No, the datasheet states it is not recommended for new design and directs users to use the DMP56D0UV.
The continuous gate-source voltage (VGSS) is rated at ±8V.
Yes, the device is qualified to AEC-Q 101 standards for high reliability.