DMP58D0SV-7

DMP58D0SV-7

$0.12
  • Description:MOSFET 2P-CH 50V 0.16A SOT563
  • Series:-

SKU:b46cbe89a3b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 50V 0.16A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:160mA
  • Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:27pF @ 25V
  • Power - Max:400mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMP58D0SV-7

Overview

The DMP58D0SV-7 is a dual P-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a logic-level gate designed for low-voltage drive applications and is housed in an SOT-563 surface-mount package. The device provides a drain-source voltage rating of 50V and supports a continuous drain current of 160mA at 25°C. Key electrical characteristics include a maximum on-resistance of 6 ohms at 4V gate drive with 100mA drain current, a gate charge of 0.58nC at 4V, and an input capacitance of 50.54pF at 25V. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual P-channel configuration integrated into a single compact surface-mount package
  • Logic-level gate architecture enabling direct interface with standard digital control signals
  • High thermal stability supporting operation across extended industrial temperature ranges

Applications

  • Battery protection circuits requiring dual-switch isolation
  • Low-side load switching in portable electronic devices
  • Power management modules for consumer electronics

Procurement Notes

Verify the manufacturer marking and date code against official Diodes Incorporated documentation to confirm authenticity. Ensure the received components match the specified SOT-563 package dimensions and pinout configuration. Request material test certificates or lot traceability data to validate compliance with RoHS directives and lead-free manufacturing standards prior to final acceptance.

Selection Notes

Select this component when a dual P-channel switch is required in space-constrained designs. The logic-level gate simplifies driver circuitry compared to standard threshold devices. Evaluate the 6-ohm on-resistance against specific voltage drop requirements at the target operating current. Confirm that the 160mA continuous current rating exceeds the peak load demands of the intended application.

Part Context

This part belongs to the DMP series of dual MOSFETs from Diodes Incorporated, which focuses on providing integrated switching solutions for portable and battery-powered systems. The series utilizes advanced silicon processes to achieve high performance in small outline packages like the SOT-563, addressing the industry trend toward miniaturization and increased power density in consumer hardware.

Replacement Considerations

Cross-reference with other dual P-channel MOSFETs in the SOT-563 package offering similar 50V ratings and logic-level thresholds. Verify pin compatibility and thermal resistance values before substitution.

DMP58D0SV-7DMP58D0SV-7
$0.12
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