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Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.22A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：37pF @ 25V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMP58D1LV-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 package. It features a drain-source voltage (V_DSS) of -50 V and a continuous drain current (I_D) of -220 mA at +25°C. The maximum static drain-source on-resistance (R_DS(on)) is 8 Ω at a gate-source voltage (V_GS) of -5 V. The device operates within a junction temperature range of -55 to +150 °C, with a total power dissipation of 0.49 W under standard FR-4 substrate conditions.
Feature Summary
- Dual P-channel configuration designed for high efficiency power management applications
- Low on-resistance combined with low gate threshold voltage for optimized switching performance
- Low input capacitance and fast switching speed characteristics
- Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction
Applications
- General purpose interfacing switches
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format as documented in the official datasheet. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the selected supplier provides traceability documentation consistent with Diodes Incorporated manufacturing protocols.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-current signal or power switching tasks. The SOT563 package offers a small footprint suitable for space-constrained designs. Evaluate the 8 Ω on-resistance against the specific load requirements to ensure acceptable conduction losses during operation.
Part Context
This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same core electrical specifications and package type as the DMP58D1LV-7 variant, differing only in the bulk packaging quantity. Both variants utilize the SOT563 surface-mount package.
Replacement Considerations
The DMP58D1LV-7 serves as a direct functional substitute with identical electrical parameters and pinout, differing solely in the tape and reel quantity.
FAQ
What is the maximum drain-source breakdown voltage for the DMP58D1LV?
The maximum drain-source breakdown voltage (BVDSS) is specified as -50 V.
Does the DMP58D1LV include internal body diodes?
Yes, the internal schematic indicates the presence of integrated body diodes for each channel.
What is the typical input capacitance of this device?
The typical input capacitance (Ciss) is 37 pF, measured at a drain-source voltage of -25 V and a frequency of 1.0 MHz.
