DMP58D1LV-7

DMP58D1LV-7

$0.30
  • Description:MOSFET 2P-CH 50V 0.22A SOT563
  • Series:-

SKU:aaea677da84c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 50V 0.22A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
  • Rds On (Max) @ Id, Vgs:8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:37pF @ 25V
  • Power - Max:490mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMP58D1LV-7

Overview

The DMP58D1LV-7 is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (V_DSS) of -50 V and a gate-source voltage (V_GSS) of ±20 V. The maximum continuous drain current (I_D) is -220 mA at +25°C, with a pulsed drain current (I_DM) of -1 A. The static drain-source on-resistance (R_DS(on)) is typically 2.2 Ω at V_GS = -5 V and I_D = -100 mA, with a maximum of 8 Ω. Total power dissipation (P_D) is 0.49 W on a minimum pad layout and 0.78 W on a 1-inch square copper pad. Thermal resistance (R_θJA) is 259 °C/W and 159 °C/W respectively.

Feature Summary

  • Dual P-channel configuration for high-efficiency power management
  • Low on-state resistance to minimize conduction losses
  • Fast switching speed with low input capacitance
  • Totally lead-free and fully RoHS compliant

Applications

  • General purpose interfacing switches
  • Power management functions
  • Analog switches

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and carrier types. Confirm that the component meets all applicable environmental directives, including RoHS 3 and REACH requirements, before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. Ensure the design accommodates the thermal constraints defined by the R_θJA values for the intended PCB copper area. Verify that the -50 V rating provides sufficient margin for the target circuit's operating conditions.

Part Context

This device belongs to the DMP series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic SOT563 package designed for surface-mount technology. The product is classified as a new generation offering focused on minimizing on-state resistance while maintaining superior switching performance.

Replacement Considerations

Consult official Diodes Incorporated cross-reference lists or datasheets for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic electrical ratings without verifying pinout compatibility and absolute maximum ratings.

DMP58D1LV-7DMP58D1LV-7
$0.30
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