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The DMP58D1LV-7 is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (V_DSS) of -50 V and a gate-source voltage (V_GSS) of ±20 V. The maximum continuous drain current (I_D) is -220 mA at +25°C, with a pulsed drain current (I_DM) of -1 A. The static drain-source on-resistance (R_DS(on)) is typically 2.2 Ω at V_GS = -5 V and I_D = -100 mA, with a maximum of 8 Ω. Total power dissipation (P_D) is 0.49 W on a minimum pad layout and 0.78 W on a 1-inch square copper pad. Thermal resistance (R_θJA) is 259 °C/W and 159 °C/W respectively.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and carrier types. Confirm that the component meets all applicable environmental directives, including RoHS 3 and REACH requirements, before finalizing procurement specifications.
Select this component when a compact dual P-channel solution is required for low-voltage applications. Ensure the design accommodates the thermal constraints defined by the R_θJA values for the intended PCB copper area. Verify that the -50 V rating provides sufficient margin for the target circuit's operating conditions.
This device belongs to the DMP series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic SOT563 package designed for surface-mount technology. The product is classified as a new generation offering focused on minimizing on-state resistance while maintaining superior switching performance.
Consult official Diodes Incorporated cross-reference lists or datasheets for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic electrical ratings without verifying pinout compatibility and absolute maximum ratings.