DMP6050SFG-7

$0.77

Description：MOSFET P-CH 60V 4.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:72f1ee2720ae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 4.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1293 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP6050SFG-7

Overview

The DMP6050SFG-7 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -4.8A at +25°C. The device exhibits a low on-state resistance of 50mΩ at VGS = -10V and 70mΩ at VGS = -4.5V. Packaged in the POWERDI3333-8 surface-mount format, it supports an operating temperature range from -55°C to +150°C with a total power dissipation of 1.8W under thermal bias conditions.

Feature Summary

Optimized for minimized on-state resistance while maintaining superior switching performance
POWERDI3333-8 package occupies approximately 33% of the board area compared to SO-8
Totally lead-free and fully RoHS compliant construction

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify that the ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2). Ensure procurement channels are authorized to maintain product integrity and warranty coverage.

Selection Notes

Select this component for high-efficiency power management applications requiring compact form factors. Evaluate thermal resistance values based on specific PCB copper thickness and pad layout requirements. Consider gate threshold voltage variations across the specified temperature range when designing drive circuits.

Part Context

This part belongs to the DMP6050 series of P-channel MOSFETs designed for space-constrained environments. It utilizes silicon technology within a molded plastic case rated UL Flammability Classification 94V-0. The terminal finish consists of matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-202 Method 208.