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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2079pF @ 30V
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMP6051SSD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and a maximum continuous drain current of -4.3A at +25°C. The device offers a low on-resistance of 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V. Packaged in an SO-8 surface-mount format, it supports a total power dissipation of 1.4W to 1.6W depending on board layout. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual P-channel configuration designed for high-efficiency power management applications
- Optimized for minimized on-state resistance while maintaining superior switching performance
- Qualified to JEDEC standards for high reliability with 100% Unclamped Inductive Switch (UIS) testing
Applications
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the required operating conditions align with the specified thermal resistance values for the chosen PCB copper area. Ensure compliance with RoHS 3 and Halogen-free requirements if mandated by the end-use environment.
Selection Notes
Select this component when a dual P-channel topology is required for synchronous rectification or high-side switching. Evaluate the gate threshold voltage characteristics against the available drive voltage levels to ensure full enhancement. Consider the thermal resistance parameters relative to the expected ambient temperature and duty cycle to maintain junction temperatures within safe operating limits.
Part Context
This part belongs to the DMP series of dual P-channel MOSFETs from Diodes Incorporated. It utilizes an SO-8 package constructed with a molded plastic compound classified as UL 94V-0. The terminals feature a tin finish annealed over a copper leadframe, ensuring solderability per MIL-STD-208 standards.
Replacement Considerations
The datasheet references the Q-suffix variant for automotive applications requiring AEC-Q qualification and PPAP capability. Verify pinout compatibility and electrical parameter equivalence before substituting with other dual P-channel MOSFETs.
FAQ
What is the maximum pulsed drain current for the DMP6051SSD?
The maximum pulsed drain current is -30A, measured with a 10μs pulse duration and a 1% duty cycle.
Does the DMP6051SSD support avalanche energy ratings?
Yes, the device has a rated avalanche energy of 37.5 mJ with an inductance of 0.1mH.
What is the typical gate charge at VGS = -10V?
The total gate charge is typically 36 nC when tested at VDS = -30V and ID = -5A.
