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The DMP6051SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage and a maximum continuous drain current of -4.3A at +25°C. The device offers low on-state resistance, specified as 60mΩ max at VGS = -10V and 80mΩ max at VGS = -4.5V. Packaged in an SO-8 surface-mount format, it supports a total power dissipation of 1.7W with a thermal resistance of 73°C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per carrier. Confirm that the component meets JEDEC standards for high reliability if required for the intended application environment. Ensure compatibility with the SO-8 package dimensions and suggested pad layout provided in the datasheet.
Select this component when a P-channel MOSFET with -60V rating and low RDS(ON) is required for efficient power switching. Consider the thermal characteristics, specifically the 73°C/W junction-to-ambient resistance, for heat dissipation planning. Evaluate the gate threshold voltage and charge requirements against the driving circuit capabilities to ensure optimal switching speed and efficiency.
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching dynamics, making them suitable for compact power supply designs where space and efficiency are critical constraints.
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix available in the manufacturer's product listing.
The maximum pulsed drain current (IDM) is -30A, defined under conditions of a 10μs pulse duration and a 1% duty cycle.
Yes, the part is qualified to JEDEC standards for high reliability, as referenced in AEC standards.