DMP6051SSS-13

DMP6051SSS-13

$0.17
  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:2caeba7eb22b Category: Brand:

  
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Product Detailed Parameters

  • Description:IC
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2079 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1.7W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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DMP6051SSS-13

Overview

The DMP6051SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage and a maximum continuous drain current of -4.3A at +25°C. The device offers low on-state resistance, specified as 60mΩ max at VGS = -10V and 80mΩ max at VGS = -4.5V. Packaged in an SO-8 surface-mount format, it supports a total power dissipation of 1.7W with a thermal resistance of 73°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
  • Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
  • Manufactured using halogen and antimony-free green materials.

Applications

  • Backlighting
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per carrier. Confirm that the component meets JEDEC standards for high reliability if required for the intended application environment. Ensure compatibility with the SO-8 package dimensions and suggested pad layout provided in the datasheet.

Selection Notes

Select this component when a P-channel MOSFET with -60V rating and low RDS(ON) is required for efficient power switching. Consider the thermal characteristics, specifically the 73°C/W junction-to-ambient resistance, for heat dissipation planning. Evaluate the gate threshold voltage and charge requirements against the driving circuit capabilities to ensure optimal switching speed and efficiency.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching dynamics, making them suitable for compact power supply designs where space and efficiency are critical constraints.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix available in the manufacturer's product listing.

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current (IDM) is -30A, defined under conditions of a 10μs pulse duration and a 1% duty cycle.

Is the device suitable for high-reliability environments?

Yes, the part is qualified to JEDEC standards for high reliability, as referenced in AEC standards.

DMP6051SSS-13DMP6051SSS-13
$0.17
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