DMP6051SSSQ-13

$0.20

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7b93cc07243f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2079 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP6051SSSQ-13

Overview

The DMP6051SSSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (V_DSS) of -60V and a continuous drain current (I_D) of -4.3A at +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 60mΩ at V_GS = -10V and 80mΩ at V_GS = -4.5V. Total power dissipation is rated at 1.7W, with a junction-to-ambient thermal resistance of 73°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Manufactured in IATF 16949 certified facilities
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable automotive quality standards and regulatory requirements for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and low on-resistance. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance. Evaluate thermal management strategies to maintain junction temperatures within the specified operating range under load conditions.

Part Context

This part belongs to Diodes Incorporated's portfolio of P-channel MOSFETs engineered for high-reliability environments. The SO-8 package provides a compact form factor suitable for surface-mount assembly. The device integrates standard enhancement mode functionality optimized for switching applications.