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Product Detailed Parameters
- Description：MOSFET P-CHANNEL 60V 7.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP6110SSDQ-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source breakdown voltage of -60V and a continuous drain current of -3.3A at +25°C ambient temperature. The maximum on-resistance is 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Total power dissipation is 1.2W at +25°C, with a junction-to-ambient thermal resistance of 104°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual channel configuration for space-efficient circuit designs
- Qualified to AEC-Q101 standards for automotive reliability
- Low on-resistance and low input capacitance for fast switching
- Totally lead-free and fully RoHS compliant
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging format. Confirm that the component meets all applicable automotive quality standards if used in regulated environments. Ensure proper handling procedures are followed during assembly due to surface mount construction. Review datasheet notes regarding thermal mounting conditions for accurate performance expectations.
Selection Notes
Select this component when a dual P-channel solution is required within an SO-8 footprint. Consider the -60V rating and current capabilities against load requirements. Evaluate thermal resistance values based on expected PCB copper area and ambient operating conditions. Verify gate drive voltages align with specified thresholds for optimal on-state performance.
Part Context
This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe. The product is classified as a green device, free from halogens and antimony. It supports PPAP documentation for manufacturing process approval.
Replacement Considerations
Check for equivalent dual P-channel MOSFETs in SO-8 packages with matching -60V ratings. Verify pinout compatibility and thermal characteristics before substitution. Ensure any alternative part also meets AEC-Q101 requirements if automotive qualification is necessary.
