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The DMP6110SVTQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -7.3A at +25°C case temperature. The device exhibits a low on-resistance of 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Packaged in a TSOT26 surface-mount housing, it supports an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets the necessary automotive qualification standards for your target application. Ensure compatibility with the intended PCB pad layout for the TSOT26 package to maintain thermal performance.
Select this component when a single P-channel MOSFET with a -60V rating is required for automotive-grade designs. Consider the low on-resistance values at both -10V and -4.5V gate drive voltages for efficiency optimization. Evaluate the thermal resistance characteristics against your system's heat dissipation capabilities.
This part belongs to the Diodes Incorporated DMP6110 series of P-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive industry requirements, offering a compact TSOT26 footprint suitable for space-constrained printed circuit board layouts.
DMP6110SVT-7
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable.
The maximum continuous drain current is -7.3A at a case temperature of +25°C.