DMP6110SVTQ-7

$0.94

Description：MOSFET P-CH 60V 7.3A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6f479d2a585d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 7.3A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：105mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：969 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-23-6
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP6110SVTQ-7

Overview

The DMP6110SVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source breakdown voltage and a maximum continuous drain current of -7.3A at +25°C case temperature. The device offers a low on-resistance of 105mΩ at VGS = -10V and 130mΩ at VGS = -4.5V. Packaged in a TSOT26-6 surface-mount housing, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability
Low on-resistance for efficient power switching
Fast switching speed with low input capacitance
PPAP capable for automotive supply chain requirements

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) matches the required tape and reel quantity. Confirm that the component meets AEC-Q101 qualification and PPAP capability requirements for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component when an automotive-grade P-channel MOSFET is required. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at -4.5V or -10V. Verify thermal dissipation capabilities against the expected load current and ambient operating conditions.

Part Context

This part belongs to the Diodes Incorporated DMP6110 series of P-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive industry standards, providing robust performance in compact surface-mount packages suitable for space-constrained electronic designs.