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Product Detailed Parameters
- Description：MOSFET P-CH 60V 3A SOT223
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：708 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
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Overview
The DMP6185SE-13 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-223 package. It features a drain-source voltage (V_DSS) of -60 V and a continuous drain current (I_D) of -3 A at +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 150 mΩ at V_GS = -10 V and 185 mΩ at V_GS = -4.5 V. Total gate charge is 14 nC at V_GS = -10 V, with a maximum gate-source voltage of ±20 V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Verified for robustness with 100% Unclamped Inductive Switching (UIS) testing during production.
- Constructed using lead-free finish materials that are RoHS compliant and free of halogens and antimony.
Applications
- Motor Control
- Transformer Driving Switch
- DC-DC Converters
- Power Management Functions
- Uninterrupted Power Supply
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm compliance requirements such as RoHS directives and Halogen/Antimony-free status against project specifications. Ensure the standard datasheet version matches the required automotive or industrial qualification levels, noting that separate automotive-compliant parts may exist under different designations.
Selection Notes
Select this component when a -60 V P-channel MOSFET is required for low-side or high-side switching within compact SOT-223 footprints. Evaluate thermal constraints carefully, as steady-state power dissipation is limited to 1.2 W at +25°C ambient without additional copper plating. Verify that the drive voltage meets the threshold requirements for the desired R_DS(ON), particularly if operating below -4.5 V gate drive.
Part Context
This part belongs to the DMP6185 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'SE' designation indicates the specific SOT-223 case style and electrical characteristics, while the '-13' suffix denotes the standard tape and reel packaging format used for automated surface-mount assembly processes.
Replacement Considerations
For automotive-specific change control requirements, consult the DMP6185SEQ variant which is qualified to AEC-Q100/101/200 standards. Cross-reference other -60 V P-channel MOSFETs in SOT-223 packages only if pinout compatibility and thermal resistance values match the existing board layout constraints.
FAQ
Is the DMP6185SE-13 suitable for automotive applications?
The standard DMP6185SE-13 is not explicitly designated for automotive use. For applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated for the automotive-compliant DMP6185SEQ part.
What is the maximum pulsed drain current capability?
The device supports a single pulsed avalanche current (IAS) of -16 A and a general pulsed drain current (IDM) of -15 A, provided the pulse duration is 10 µs with a duty cycle of 1%.
