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The DMP6185SE is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT-223 package. It features a drain-source voltage (V_DSS) of -60 V and a continuous drain current (I_D) of -3 A at +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 150 mΩ at V_GS = -10 V and 185 mΩ at V_GS = -4.5 V. Total power dissipation reaches 1.2 W at +25°C with a thermal resistance (R_θJA) of 104 °C/W. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official documentation, as packaging configurations vary by manufacturer designation. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement plans.
Select this component when a P-channel MOSFET with a -60 V rating and up to -3 A continuous current capability is required. Ensure the gate drive voltage aligns with the specified R_DS(ON) thresholds of -4.5 V or -10 V for optimal performance within the -55°C to +150°C operating range.
This part belongs to the DMP6185 series of surface-mount P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic case material classified as UL 94V-0 flammability rated. The device terminals are finished with matte tin annealed over a copper lead frame, ensuring solderability per MIL-STD-208.
An automotive-compliant version exists under the separate datasheet designation DMP6185SEQ.