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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 0.238A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：238mA (Ta)
- Rds On (Max) @ Id, Vgs：8Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 30V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP68D1LVQ-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in SOT563. It features a drain-source voltage of -60V and a continuous drain current of -238mA at +25°C. The maximum on-resistance is 8Ω at VGS = -5V. Operating temperature ranges from -55°C to +150°C with a power dissipation of 0.5W.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Dual channel configuration in compact SOT563 package
- Low input capacitance and fast switching speed
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the component against the official datasheet DS44973 Rev. 2-2 to confirm specifications. Ensure the ordering suffix matches the required packing quantity. Confirm compliance with AEC-Q101 standards if used in automotive contexts. Validate that the manufacturer is Diodes Incorporated.
Selection Notes
Select this component for designs requiring dual P-channel MOSFETs in a small footprint. Consider the 8Ω on-resistance and -60V rating for low-power switching tasks. Verify thermal management capabilities given the 0.5W power dissipation limit in the SOT563 package.
Part Context
This part belongs to the DMP series of dual P-channel MOSFETs by Diodes Incorporated. It is designed to meet stringent automotive requirements, supported by PPAP documentation. The device utilizes silicon technology and is manufactured in IATF 16949 certified facilities.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
Is the DMP68D1LVQ-7 suitable for automotive applications?
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the maximum gate-source voltage for this MOSFET?
The maximum gate-source voltage (VGSS) is ±20V.
Does the DMP68D1LVQ-7 contain halogens or antimony?
No, it is a "Green" device that is halogen and antimony free.
