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Product Detailed Parameters
- Description：MOSFET P-CH 12V 80A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：124 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：6334 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：3.2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMPH1006UPSQ-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -12V drain-source voltage rating and operates up to +175°C junction temperature. The device utilizes the PowerDI5060-8 package, offering low on-resistance of 6mΩ at VGS=-4.5V and 8mΩ at VGS=-2.5V. Continuous drain current reaches -80A at TC=+25°C. It supports high conversion efficiency with fast switching speeds and includes 100% unclamped inductive switching capability.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Ensures reliable end applications through 100% unclamped inductive switching testing
- Minimizes on-state losses via low RDS(ON) characteristics
- Supports fast switching speed with low input capacitance
Applications
- Notebook Battery Power Management
- DC-DC Converters
- Load Switch
Procurement Notes
Verify component authenticity by checking the marking code PH1006US against official Diodes Incorporated documentation. Confirm AEC-Q101 qualification status and PPAP capability requirements specific to your automotive supply chain standards. Ensure the ordering suffix matches the required tape and reel packaging configuration for automated assembly processes.
Selection Notes
Select this component when designing circuits requiring robust P-channel switching under high thermal stress conditions. The -12V rating suits low-voltage automotive systems. Evaluate gate drive voltages carefully, as RDS(ON) varies significantly between -2.5V and -4.5V thresholds. Consider the PowerDI5060-8 footprint constraints and thermal dissipation needs relative to the specified power ratings.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for stringent reliability standards. It is manufactured in IATF 16949 certified facilities. The DMPH series focuses on providing high current handling capabilities within compact surface-mount packages suitable for space-constrained electronic control units and power management modules.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts and thermal resistance values when considering similar PowerDI5060-8 devices from other manufacturers to ensure mechanical and electrical compatibility without design modification.
