DMPH16M1UPSW-13

$0.27

Description：MOSFET BVDSS: 8V~24V PowerDI5060
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:77781719f37d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V PowerDI5060
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.95W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMPH16M1UPSW-13

Overview

The DMPH16M1UPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of -12 V and a gate-source voltage (V_GSS) rating of ±8 V. The device supports a continuous drain current (I_D) of -96 A at +25°C case temperature and handles a pulsed drain current (I_DM) of -147 A. Static drain-source on-resistance (R_DS(ON)) is specified as 6 mΩ at V_GS = -4.5 V and 8 mΩ at V_GS = -2.5 V. Operating and storage temperatures range from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Features 100% unclamped inductive switching testing for robust end-application reliability.
Designed with low R_DS(ON) to minimize on-state losses and maintain high conversion efficiency.
Utilizes low input capacitance and fast switching speed characteristics.

Applications

Notebook battery power management
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package dimensions align with your PCB footprint requirements. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your specific board layout conditions.

Selection Notes

Select this component when applications require high current handling capabilities within a compact surface-mount form factor. The -12 V rating suits low-voltage power distribution systems. Verify that the gate drive voltage levels are compatible with the threshold and on-resistance specifications provided for optimal performance.

Part Context

This part belongs to Diodes Incorporated's portfolio of silicon N-Channel and P-Channel MOSFETs designed for power management solutions. The PowerDI series utilizes molded plastic packages with exposed drain pads to enhance thermal dissipation compared to traditional leaded packages, supporting modern miniaturization trends.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package type, and electrical characteristics to ensure functional compatibility without circuit modification.