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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMPH4009SSSQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of -11A at 25°C, with a typical on-resistance of 11mΩ at VGS = -10V and -9.8A. It utilizes an SO-8 surface-mount package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Designed to minimize on-state resistance while maintaining superior switching performance
- Suitable for automotive applications requiring specific change control
- Qualified to AEC-Q101 standards and capable of PPAP submission
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the component against the official datasheet DS45438 Rev. 3-2 to confirm technical specifications match design requirements. Ensure that the SO-8 package dimensions align with the PCB footprint layout. Confirm compliance with RoHS 3 and REACH directives if required by the target market regulations. Validate that the supplier source is authorized to prevent counterfeit components.
Selection Notes
Select this component when a low-voltage P-channel MOSFET is required for high-efficiency power management circuits. The device is appropriate for designs needing robust thermal performance up to 175°C. Consider the SO-8 package constraints regarding thermal dissipation and available board space. Verify gate drive voltage compatibility with the specified threshold characteristics.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution focusing on reduced on-resistance without compromising switching speed. The product line targets modern power management systems where efficiency and thermal stability are critical operational parameters.
Replacement Considerations
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-referencing requires matching electrical ratings, package type, and thermal characteristics to ensure functional equivalence.
