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Product Detailed Parameters
- Description：MOSFET P-CH 40V 55A TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4004 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The DMPH4013SK3Q-13 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -40V drain-source voltage rating and supports continuous drain currents of -55A at +25°C and -40A at +100°C. The device exhibits low on-resistance, specified as 15mΩ at VGS=-10V and 23mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive environments
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Reverse-polarity protections
- Motor control
- Power management
Procurement Notes
Verify the complete part number including the suffix '-13' to confirm tape and reel packaging quantities. Confirm that the specific orderable part matches the required package type and manufacturing facility certifications. Ensure compliance with RoHS directives and halogen-free requirements during procurement.
Selection Notes
Select this component when high thermal stability and automotive reliability are required. The TO252 package provides robust surface-mount capabilities. Evaluate gate charge and switching speeds against driver capabilities. Consider the maximum power dissipation limits under your specific ambient temperature conditions.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TO252 (DPAK) package. The product line is engineered to meet stringent automotive quality standards, ensuring consistency and reliability for critical electronic systems.
Replacement Considerations
Consult official datasheets for cross-reference compatibility. Verify pinout alignment and electrical parameter margins before substitution. Ensure any alternative component meets the same AEC-Q101 qualification level if used in automotive contexts.
