DMPH4013SPSQ-13

$1.93

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c2cbf1568573 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 20 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4763 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMPH4013SPSQ-13

Overview

The DMPH4013SPSQ-13 is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage. It delivers a continuous drain current of -69A at +25°C case temperature and features a maximum on-resistance of 13mΩ at VGS = -10V. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 1.5W in ambient conditions. Packaged in PowerDI5060-8, it supports automotive reliability standards.

Feature Summary

Qualified to AEC-Q101 with PPAP capability for automotive environments
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production

Applications

Reverse polarity protections
BLDC motor controls
Power-management functions

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards for your application. Ensure thermal management aligns with the specified power dissipation limits. Check for compliance with RoHS and halogen-free requirements before finalizing procurement.

Selection Notes

Select this component when high current handling and low on-resistance are critical for efficiency. Consider the PowerDI5060-8 package for compact surface-mount designs requiring robust thermal performance. Evaluate gate drive voltages against the specified thresholds for optimal switching characteristics.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology optimized for high-current applications. The PowerDI5060-8 package provides enhanced thermal dissipation compared to standard small-signal packages.