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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4234 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMPH4015SPSW-13 is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage. It features a maximum on-resistance of 11mΩ at VGS=-10V and 15mΩ at VGS=-4.5V, supporting continuous drain currents of -50A at TC=+25°C and -40A at VGS=-4.5V. The device operates within a junction temperature range of -55°C to +175°C and utilizes a PowerDI5060-8 package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Passes 100% unclamped inductive switching (UIS) testing in production
- Designed to minimize on-state resistance while maintaining fast switching performance
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the standard commercial version meets project requirements, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure compatibility with the specified PowerDI5060-8/SWP (Type UX) footprint during procurement planning.
Selection Notes
Select this component for applications requiring low on-resistance and robust switching capabilities in compact surface-mount designs. Evaluate thermal management strategies based on the specified thermal resistance values for both minimum recommended pad layouts and larger copper plate configurations. Consider the gate threshold voltage characteristics when designing drive circuits for varying load conditions.
Part Context
This part belongs to Diodes Incorporated's generation of P-channel MOSFETs designed for high-efficiency power management. It is housed in the PowerDI5060-8 package, which provides a compact form factor suitable for space-constrained PCB layouts. The device is manufactured using silicon technology and complies with RoHS directives.
Replacement Considerations
An automotive-compliant alternative is available as DMPH4015SPSWQ. Verify pinout and electrical specifications against existing designs before substitution.
