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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5697 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：4.9W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMPH4016SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -40V drain-source voltage rating and an on-resistance of 11mΩ at VGS = -10V, supporting a continuous drain current of -80A at TC = +25°C. The device operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of -2.5V maximum, a total gate charge of 112nC at VGS = -10V, and a thermal resistance from junction to case of 1.1°C/W. It utilizes a TO252 (DPAK) package.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Low on-resistance with fast switching speed
Applications
- DC-DC converters
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as defined by the manufacturer's green product guidelines. Ensure the application environment supports the specified thermal characteristics and operating temperature limits.
Selection Notes
Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Consider the -40V voltage rating and -80A current capability relative to the system requirements. Evaluate the thermal resistance and package type against the available cooling solutions and PCB layout constraints.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs designed for high ambient temperature environments. It represents a new generation of devices optimized to minimize on-state resistance while maintaining fast switching speeds. The TO252 package provides a balance between power handling capabilities and surface mount convenience.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-reference key parameters such as voltage rating, current capacity, and package dimensions when evaluating alternatives.
