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The DMPH4023SPDW is a dual P-channel enhancement mode MOSFET rated for -40V drain-source voltage and -27A continuous drain current at +25°C. It features a maximum on-state resistance of 26mΩ at VGS=-10V, enabling high-efficiency power management. The device operates within a junction temperature range of -55°C to +175°C and utilizes a PowerDI5060-8 surface-mount package.
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier format. Confirm that the component meets RoHS, halogen-free, and antimony-free requirements as defined by the manufacturer's quality standards before finalizing procurement specifications.
Select this component when designing systems requiring dual P-channel MOSFETs in a compact PowerDI5060-8 footprint. Ensure the application demands an operating temperature range extending to +175°C and requires low RDS(ON) characteristics to maintain high conversion efficiency in power management architectures.
This part belongs to Diodes Incorporated's DMPH series of dual P-channel enhancement mode MOSFETs. It is designed specifically for applications prioritizing high conversion efficiency and superior switching performance while minimizing on-state resistance. The series targets robust power management solutions in demanding environments.
An automotive-compliant version is available under the separate datasheet for the part number DMPH4023SPDWQ.
The device is rated for a maximum junction temperature of +175°C.
It contains two independent P-channel enhancement mode MOSFETs within a single package.
The maximum continuous gate-source voltage is ±20V.