DMPH4026SFVWQ-13

$0.24

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:493e23edbf72 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMPH4026SFVWQ-13

Overview

The DMPH4026SFVWQ-13 is a P-channel enhancement mode MOSFET rated for -40V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 25mΩ at VGS=-10V and 45mΩ at VGS=-4.5V, with continuous drain currents of -52A at TC=+25°C and -38A at TC=+100°C. Packaged in PowerDI3333-8 (SWP) Type UX, it supports automotive AEC-Q101 qualification and PPAP requirements.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Low on-state resistance ensures minimal power losses during conduction
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 packages

Applications

Reverse-polarity protections
Power-management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity. The -13 suffix indicates a tape and reel carrier with a factory packaging quantity of 3000 units. Confirm compliance with RoHS 3 and halogen-free standards if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low thermal resistance and small footprint make it suitable for space-constrained designs. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and is designed to meet stringent automotive quality standards. The part is fully lead-free and compliant with EU directives regarding hazardous substances.