DMPH4026SFVWQ-7

$0.26

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f34b01a060b1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2064 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMPH4026SFVWQ-7

Overview

The DMPH4026SFVWQ is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a -40V drain-source breakdown voltage and operates up to +175°C junction temperature. The device offers low on-resistance of 25mΩ at VGS=-10V and 45mΩ at VGS=-4.5V, supporting continuous drain currents of -52A at TC=+25°C. Packaged in the thermally efficient PowerDI3333-8 (SWP) format, it ensures minimal board area usage while maintaining high reliability through 100% UIS testing.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Low RDS(ON) characteristics ensure minimal on-state power losses
Small form factor package enables higher density end products with 33% less board area than SO-8 equivalents
Qualified to AEC-Q101 standards with PPAP capability for automotive use

Applications

Reverse-polarity protections
Power-management functions
DC-DC converters

Procurement Notes

Verify that the specific ordering suffix matches the required packing quantity, as the component is available in 2000-unit or 3000-unit tape and reel configurations. Confirm compliance with RoHS 3 and Halogen-free requirements if mandated by project specifications. Ensure procurement channels are authorized to maintain IATF 16949 manufacturing traceability and quality assurance standards.

Selection Notes

Select this component when designing circuits requiring robust reverse polarity protection or efficient power management in space-constrained automotive systems. The low thermal resistance and small footprint make it suitable for high-density layouts. Verify gate drive voltages align with the specified thresholds for optimal on-resistance performance under varying load conditions.

Part Context

This part belongs to the DMPH series of P-channel MOSFETs optimized for automotive-grade reliability. It utilizes silicon technology within a molded plastic PowerDI package. The series is manufactured in IATF 16949 certified facilities, ensuring consistent quality for demanding electronic control units and power distribution networks in vehicle architectures.