DMPH6050SFGQ-7

$0.96

Description：MOSFET P-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:faeb79414444 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.1A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1293 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMPH6050SFGQ-7

Overview

The DMPH6050SFGQ is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source breakdown voltage and operates with a maximum junction temperature of +175°C. The device is housed in a PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V, both measured at ID=-7A. Continuous drain current ratings are -18A at TC=+25°C and -12A at TC=+100°C. The component meets AEC-Q101 automotive qualification standards.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications with PPAP capability.
Rated for operation up to +175°C junction temperature for high ambient environments.
Features 100% unclamped inductive switching testing for robust end applications.
PowerDI3333-8 package occupies significantly less board area than SO-8 equivalents.

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMPH6050SFGQ-7 (2,000 units per tape and reel) and DMPH6050SFGQ-13 (3,000 units per tape and reel). Confirm that the required packaging quantity matches your production line equipment before placing orders. Ensure compliance with RoHS and halogen-free requirements if specified for your assembly process.

Selection Notes

Select this component for designs requiring high thermal stability and low on-state resistance in compact footprints. The -60V rating suits standard 48V or lower automotive bus architectures. Verify gate drive voltages against the 50mΩ threshold at -10V or the 70mΩ threshold at -4.5V to optimize efficiency. Consider the 175°C rating for systems with limited airflow or high ambient temperatures.

Part Context

This part belongs to the DMPH series of automotive-grade power MOSFETs from Diodes Incorporated. It utilizes silicon technology within a lead-frame based plastic molded package. The device is designed to replace larger packages like SO-8 while maintaining comparable electrical performance, facilitating denser PCB layouts for modern electronic control units.

Replacement Considerations

Direct substitutes must match the -60V P-Channel specification, PowerDI3333-8 footprint, and AEC-Q101 qualification. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other Diodes Incorporated parts in the DMPH family for potential pin-compatible alternatives with different current or resistance ratings.

FAQ

Is the DMPH6050SFGQ qualified for automotive use?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.