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The DMPH6050SK3-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) case with a drain-source voltage rating of -60V and a continuous drain current of -23.6A at +25°C case temperature. The maximum on-state resistance is 50mΩ at VGS = -10V and -7A, or 70mΩ at VGS = -4.5V and -7A. Total gate charge is 25nC at VGS = -10V. The device operates within a junction temperature range of -55°C to +175°C.
Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration. Confirm that the non-qualified commercial version matches project requirements if an automotive-compliant variant is not strictly necessary. Ensure component authenticity through authorized distribution channels.
Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Evaluate thermal constraints carefully as the device supports high ambient temperatures. Verify compatibility with system gate drive voltages given the specified threshold characteristics.
This part belongs to the DMPH6050SK3 series of P-channel MOSFETs designed to minimize on-state resistance while maintaining robust switching capabilities. It utilizes a molded plastic green molding compound case material classified as UL 94V-0 flammability rated.
An automotive-compliant alternative is available under the separate datasheet designation DMPH6050SK3Q.
The standard DMPH6050SK3-13 is not explicitly stated as automotive-qualified in its primary datasheet; however, an automotive-compliant version exists under the separate designation DMPH6050SK3Q.
The maximum operating junction temperature is +175°C.