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Product Detailed Parameters
- Description：MOSFET 2P-CH 26A POWERDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1525pF @ 30V
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMPH6050SPDQ-13 is a dual P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 48mΩ at VGS=-10V and 60mΩ at VGS=-4.5V, supporting continuous drain currents of -26A at case temperature and -6.3A at ambient temperature. Packaged in a PowerDI5060-8 surface-mount format, it includes an exposed drain pad for thermal management.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Rated for high ambient temperatures up to +175°C
- Features 100% unclamped inductive switching testing for robustness
- Low gate charge minimizes switching losses
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 manufacturing facility standards for your supply chain. Ensure compatibility with RoHS 3 and halogen-free material specifications during procurement validation.
Selection Notes
Select this component when designing circuits requiring dual P-channel isolation within a compact footprint. The PowerDI5060-8 package provides superior thermal dissipation compared to standard SOIC packages. Verify that the system's gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.
Part Context
This part belongs to the DMPH series of automotive-grade power MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which integrates an exposed copper leadframe for efficient heat transfer. The series is engineered to replace discrete solutions in space-constrained automotive electronic modules.
Replacement Considerations
DMPH6050SPDQ-13
FAQ
What is the maximum operating junction temperature?
The device is rated for a maximum junction temperature of +175°C.
Is the component suitable for automotive environments?
Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.
How does the package aid in thermal management?
The PowerDI5060-8 package includes an exposed drain pad that connects directly to the PCB ground plane for effective heat dissipation.
