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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 6.3A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.3A (Ta), 26A (Tc)
- Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1525pF @ 30V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMPH6050SPDWQ-13 is a dual P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage and operates up to +175°C junction temperature. The device offers low on-resistance of 48mΩ at VGS=-10V and 60mΩ at VGS=-4.5V, supporting continuous currents of -26A (TC=+25°C) or -23A (TC=+100°C). Packaged in PowerDI5060-8/SWP with wettable flanks, it meets AEC-Q101 standards and includes 100% UIS testing.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Rated for operation up to +175°C junction temperature
- Features wettable flank terminals for improved optical inspection reliability
- Guaranteed 100% unclamped inductive switching performance
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units. Confirm that the 'Q' designation indicates AEC-Q101 qualification and IATF 16949 manufacturing compliance. Ensure the PowerDI5060-8/SWP package type matches the required PCB footprint and thermal dissipation needs for the target application environment.
Selection Notes
Select this component when high ambient temperature tolerance up to +175°C is required. The dual configuration allows for space-saving integration compared to single discrete devices. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at either -4.5V or -10V. Consider the thermal resistance characteristics relative to the available copper area on the printed circuit board.
Part Context
This part belongs to the DMPH series of dual P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides enhanced thermal performance and soldering reliability through its wettable flank design. The series is specifically engineered to meet the rigorous quality and environmental demands of modern automotive electronic systems.
Replacement Considerations
DMPH6050SSDQ-13: Dual P-channel MOSFET in SOIC-8 package; verify pinout compatibility and thermal differences.
FAQ
What is the maximum operating junction temperature?
The device is rated for an operating and storage temperature range of -55°C to +175°C.
Does the device support unclamped inductive switching?
Yes, the datasheet specifies 100% unclamped inductive switching testing to ensure robustness.
What are the gate threshold voltage limits?
The gate-source threshold voltage (VGS(TH)) has a maximum limit of -3.0V at ID = -250μA.
