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Product Detailed Parameters
- Description：MOSFET 2P-CH 5.2A 8SOIC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
- Rds On (Max) @ Id, Vgs：48mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1525pF @ 30V
- Power - Max：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMPH6050SSD-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a continuous drain current of -5.2A at 25°C, with a maximum on-resistance of 48mΩ at VGS=-10V and -5A. Packaged in an SO-8 surface-mount case, it includes two independent channels designed for high-efficiency power management applications.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching capability
- Qualified to AEC-Q101 automotive standards
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements and ensure the package type matches the required SO-8 footprint for your PCB layout. Cross-reference the datasheet revision to confirm all electrical parameters align with your design specifications before finalizing procurement.
Selection Notes
Select this component when a dual P-channel configuration is required in a compact SO-8 package. Ensure the application demands a -60V breakdown voltage and can accommodate the specified thermal resistance values. Verify that the gate drive voltage levels are compatible with the threshold characteristics provided in the datasheet for optimal switching performance.
Part Context
This part belongs to the DMPH6050 series of dual P-channel MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions requiring robust reliability in demanding environments.
Replacement Considerations
The DMPH6050SSDQ-13 is documented as an available automotive-compliant alternative under a separate datasheet. Verify pinout compatibility and thermal characteristics when substituting.
