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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2087 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMPH6051SFVWQ is a P-channel enhancement mode MOSFET rated for -60V drain-source voltage and -20.6A continuous drain current at +25°C case temperature. It features a maximum on-resistance of 60mΩ at VGS=-10V and 80mΩ at VGS=-4.5V. The device operates within a junction temperature range of -55°C to +175°C and is housed in a PowerDI3333-8 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features wettable flanks to facilitate optical inspection
Applications
- Motor controls
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the datasheet to confirm the correct packing quantity and carrier type. Ensure that the procurement documentation explicitly references the IATF 16949 manufacturing certification required for automotive-grade components.
Selection Notes
Select this component when high ambient temperature tolerance and low conduction losses are critical. The PowerDI3333-8 package provides a compact footprint suitable for space-constrained designs requiring robust thermal performance and high current handling capabilities.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, designed specifically for environments demanding strict reliability standards. It utilizes silicon technology and complies with RoHS directives while maintaining lead-free and halogen-free specifications.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Do not assume pin-compatible alternatives without confirming electrical parameters and package dimensions match the original requirements.
