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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2079 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMPH6051SSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 60mΩ at VGS = -10V and 80mΩ at VGS = -4.5V, with a continuous drain current of -4.4A at TA = +25°C. Packaged in an SO-8 surface-mount format, it includes a total gate charge of 36nC at VGS = -10V.
Feature Summary
- Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
- Qualified to JEDEC standards for high reliability, with an automotive-compliant variant available under separate datasheet.
- Manufactured using lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the manufacturer's ordering information. Confirm compliance requirements such as RoHS 3 and REACH status against the latest product definitions provided by Diodes Incorporated before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a single P-channel MOSFET with a -60V breakdown voltage and low on-resistance characteristics. Ensure the application gate drive voltage supports the specified RDS(ON) thresholds at either -4.5V or -10V. Verify thermal management capabilities align with the stated thermal resistance values for the intended operating environment.
Part Context
This part belongs to the DMPH series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 package constructed with molded plastic and matte tin annealed over a copper leadframe. The device is designed to balance low conduction losses with fast switching speeds for efficient power conversion systems.
Replacement Considerations
The automotive-compliant version DMPH6051SSSQ is noted as an alternative under a separate datasheet. No other direct substitute part numbers are explicitly confirmed in the provided documentation.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at -30 A based on a 10μs pulse duration with a 1% duty cycle.
Is this component suitable for automotive applications?
While this specific part is qualified to JEDEC standards for high reliability, an automotive-compliant part is available under the separate datasheet for DMPH6051SSSQ.
