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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.5A 6-DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：95mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type B)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMS2220LFDB-7 is a P-channel enhancement mode MOSFET with an integrated Super Barrier Rectifier (SBR) in a U-DFN2020-6 Type B package. It features a drain-source voltage of -20V and a continuous drain current of -3.5A. The device exhibits low on-resistance, reaching 95mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. Power dissipation is rated at 1.4W with a thermal resistance of 89°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates a low forward voltage SBR diode for synchronous rectification applications
- Provides fast switching speed with low input and output leakage currents
- Features a low profile case with a maximum height of 0.5mm
- Qualified to AEC-Q101 standards for high reliability automotive applications
Applications
- Synchronous rectification in DC/DC converters
- Low voltage power management circuits
- Automotive electronic control units
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2 and halogen-free requirements by checking the manufacturer's official documentation. Ensure the component meets the required AEC-Q101 qualification standards if used in automotive environments.
Selection Notes
Select this component for designs requiring a compact footprint with combined switching and rectification capabilities. Evaluate the 95mΩ on-resistance against system efficiency targets at the intended gate drive voltage. Consider the 1.4W power dissipation limit and thermal resistance when designing heat dissipation strategies for the U-DFN2020-6 package.
Part Context
This part belongs to the DMS2220 series of dual-function power devices from Diodes Incorporated. It combines a P-channel MOSFET with an integrated SBR diode to reduce component count and board space. The U-DFN2020-6 Type B package provides a low-profile solution suitable for dense PCB layouts.
Replacement Considerations
Check datasheets for alternative P-channel MOSFETs with integrated diodes in the U-DFN2020-6 package. Verify that substitute parts match the -20V rating, -3.5A current capacity, and on-resistance specifications. Ensure pinout compatibility and thermal performance are equivalent.
