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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4310 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMS3012SFG-7 is a 30V N-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It utilizes the DIOFET patented process to monolithically integrate components on a single die. The device features a maximum drain-source voltage of 30V and continuous drain currents ranging from 9.5A to 16.0A depending on thermal conditions. On-resistance is specified at 10mΩ at VGS=10V and 15mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C and is housed in a PowerDI3333-8 package.
Feature Summary
- Monolithic integration of a MOSFET and Schottky diode on a single die to minimize conduction losses and body diode switching losses.
- Low gate capacitance ratio designed to reduce the risk of shoot-through or cross-conduction currents at high frequencies.
- Small form factor thermally efficient package that occupies significantly less board area compared to traditional SO-8 packages.
- Rated for 100% unclamped inductive switching (UIS) and tested for gate resistance.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity through authorized channels as counterfeit risks exist. Confirm RoHS compliance status and lead-free specifications against current regulatory requirements. Check datasheet revision history for any parameter updates. Ensure storage conditions meet moisture sensitivity level standards prior to soldering. Validate package dimensions against PCB footprint requirements.
Selection Notes
Evaluate thermal performance based on specific PCB copper area and ambient temperature conditions. Compare on-resistance values at intended gate drive voltages to ensure efficiency targets are met. Consider the integrated Schottky diode characteristics for synchronous rectification applications. Assess package compatibility with automated assembly processes and reflow soldering profiles.
Part Context
This component belongs to the DMS30 series of asymmetric dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series leverages proprietary DIOFET technology to combine power switching and freewheeling functions. The PowerDI3333-8 package provides a compact solution for space-constrained designs requiring high reliability and low thermal resistance.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART'. No official substitute part numbers are provided by the manufacturer. Design modifications may be required if sourcing this component for new production runs.
FAQ
What is the purpose of the integrated Schottky diode?
The integrated Schottky diode reduces losses due to body diode conduction and lowers reverse recovery charge (Qrr), which minimizes body diode switching losses.
How does the DIOFET process benefit high-frequency operation?
It provides a low gate capacitance (Qg/Qgs) ratio, which reduces the risk of shoot-through or cross-conduction currents during high-frequency switching.
