DMS3016SSS-13

Description：MOSFET N-CH 30V 9.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a1aaed47d65f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 9.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1849 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：1.54W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMS3016SSS-13

Overview

The DMS3016SSS-13 is a single-channel N-channel enhancement mode MOSFET with an integrated Schottky diode, manufactured by Diodes Incorporated. It utilizes a patented DIOFET process to monolithically integrate the components on a single die within an SO-8 package. Key electrical parameters include a drain-source voltage (VDSS) of 30 V, a continuous drain current (ID) of 9.8 A at +25°C, and a static drain-source on-resistance (RDS(ON)) of 9 mΩ at VGS = 10V. The device features a gate-source voltage rating of ±12 V, a maximum power dissipation of 1.54 W, and operates within a temperature range of -55°C to +150°C.

Feature Summary

Monolithic integration of an N-channel MOSFET and a Schottky diode on a single die using a unique patented DIOFET process.
Optimized for high-frequency switching with a low gate capacitance ratio to reduce shoot-through risks.
Avalanche rugged design rated for repetitive avalanche energy and current.
Low reverse recovery charge (Qrr) in the integrated Schottky to minimize body diode switching losses.

Applications

DC-DC converters
Power management functions
Analog switches

Procurement Notes

Verify component authenticity through authorized channels as the datasheet explicitly states this part is not recommended for new designs and has no alternate part. Confirm compliance with RoHS 2, RoHS 3, and halogen/antimony-free requirements. Ensure the SO-8 package matches the specific thermal and mechanical constraints of the target application layout.

Selection Notes

Select this component when a compact solution combining fast-switching MOSFET capabilities with low-loss synchronous rectification or freewheeling is required. The integrated Schottky reduces external component count and board space compared to discrete solutions. Consider the 30V voltage rating and 9.8A current capacity against the specific load requirements and thermal management capabilities of the PCB layout.

Part Context

This component belongs to the DMS series from Diodes Incorporated, which focuses on DIOFET technology. It is designed to offer a small form factor that occupies significantly less board area than standard SO-8 packages while maintaining high reliability. The product is qualified to AEC-Q101 standards, indicating suitability for automotive applications requiring high reliability.

Replacement Considerations

The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No direct substitute is provided by the manufacturer.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±12 V.

Is the device suitable for high-frequency switching applications?

Yes, it features a low gate capacitance (Qg/Qgs) ratio specifically designed to reduce the risk of shoot-through or cross-conduction currents at high frequencies.