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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7A/5.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A, 5.7A
- Rds On (Max) @ Id, Vgs：15mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1932pF @ 15V
- Power - Max：1.19W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMS3019SSD-13 is an asymmetric dual N-channel enhancement mode MOSFET in an SO-8 package. It integrates a Schottky diode on one die (Q2) and a standard MOSFET on the other (Q1). Q1 features a 30V drain-source voltage, 7.0A continuous current at 25°C, and 10mΩ on-resistance. Q2 offers 30V breakdown, 5.7A current, and 15mΩ resistance. The device supports -55°C to +150°C operation, utilizes avalanche-rated technology, and meets AEC-Q101 standards.
Feature Summary
- Monolithic integration of a MOSFET and a Schottky diode on a single die to minimize conduction and body diode switching losses
- Asymmetric configuration with distinct electrical characteristics for each channel within the same package
- Avalanche rugged design rated for repetitive avalanche energy and current applications
- Qualified to AEC-Q101 automotive standards for high reliability environments
Applications
- Automotive power management systems requiring high reliability
- High-frequency switching circuits utilizing low gate charge ratios
- Power stages needing integrated fast recovery rectification
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels. Confirm the specific ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS and halogen-free definitions if environmental specifications are mandatory for the assembly process.
Selection Notes
Select this component when asymmetric dual-channel performance is required. Compare the distinct on-resistance and current ratings between Q1 and Q2 against circuit load requirements. Evaluate the integrated Schottky benefits for reverse recovery reduction versus discrete solutions.
Part Context
This part belongs to the DMS series of asymmetric dual MOSFETs from Diodes Incorporated. It is designed for compact power solutions where space efficiency and reduced switching losses are critical. The SO-8 case provides a balance of thermal performance and footprint size for surface mount applications.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and 'NO ALTERNATE PRODUCT'. No verified substitute part numbers are available in official documentation.
FAQ
What is the difference between Q1 and Q2 in the DMS3019SSD?
Q1 is a standard N-channel MOSFET with lower on-resistance and higher current capability. Q2 is an N-channel MOSFET monolithically integrated with a Schottky diode, featuring different threshold voltages and slightly higher on-resistance.
Is the DMS3019SSD suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive power management applications.
How does the integrated Schottky diode affect switching performance?
The integrated Schottky diode on Q2 reduces reverse recovery charge (Qrr), which lowers body diode switching losses and minimizes the risk of shoot-through currents at high frequencies.
