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Product Detailed Parameters
- Description：MOSFET N-CH 100V 84A TO251
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2309 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The DMT10H009LH3 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 84A at TC = +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 9mΩ max at VGS = 10V and ID = 20A, or 13mΩ max at VGS = 4.5V and ID = 5A. Total gate charge (Qg) is 20.2nC max at VDD = 50V, ID = 20A, and VGS = 4.5V. The component is housed in a TO-251 (Type TH3) package with a total power dissipation of 96W at TC = +25°C.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production to ensure robust end application reliability
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management
- Lead-free finish and RoHS compliant, also halogen and antimony free
Applications
- Motor Control
- Backlighting
Procurement Notes
Verify the specific ordering suffix 'H3' corresponds to the tube packaging configuration containing 75 pieces per tube as documented in the manufacturer's datasheet. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the definition of halogen- and antimony-free materials provided by Diodes Incorporated. Ensure the procurement channel is authorized to avoid warranty issues.
Selection Notes
Select this component when a 100V N-channel MOSFET with high current handling capability up to 84A is required. Consider the low RDS(ON) values for minimizing conduction losses in power management circuits. Evaluate the thermal characteristics, including the junction-to-case thermal resistance of 1.3°C/W, against the expected operating temperature range of -55°C to +150°C. Verify compatibility with the TO-251 through-hole mounting style.
Part Context
This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose power switching applications. The device is classified under discrete semiconductors and transistors. It is distinct from surface-mount variants within the same family due to its specific TO-251 through-hole package configuration.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference parameters such as BVDSS, ID, RDS(ON), and package type when evaluating alternatives.
