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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V V-DFN3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：V-DFN3333-8 (Type B)
- Package / Case：8-PowerVDFN
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Overview
The DMT10H009SCG-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 (Type B) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 100V, a maximum continuous drain current of 48A at case temperature +25°C, and a static drain-source on-resistance of 9.5mΩ maximum at VGS=10V and ID=20A. The device has a total gate charge of 30nC and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state losses while maintaining superior switching performance through low input capacitance and fast switching speed.
- Manufactured with totally lead-free and fully RoHS compliant materials that are halogen and antimony free.
- Verified for reliability with 100% unclamped inductive switch (UIS) testing conducted during production.
Applications
- Notebook battery power management
- Load switch circuits
- Backlighting systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 2000 units per reel. Confirm the component matches the exact datasheet revision DS42281 Rev. 2 - 2 to ensure compatibility with design specifications and manufacturing standards.
Selection Notes
Select this component for applications requiring high conversion efficiency and low thermal resistance. The V-DFN3333-8 package provides a compact footprint suitable for space-constrained designs. Ensure the gate drive voltage meets the 10V requirement to achieve the specified minimum on-current capabilities.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize silicon technology optimized for power management functions. The series offers various packages including PowerDI and SO-8 configurations to accommodate different thermal and spatial requirements.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as the 100V breakdown voltage, 9.5mΩ on-resistance, and the V-DFN3333-8 (Type B) physical package dimensions.
