DMT10H009SK3-13

$0.40

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4fec8ad44812 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2028 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H009SK3-13

Overview

The DMT10H009SK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 91A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 6.9mΩ, with a maximum of 9.1mΩ at VGS = 10V and ID = 20A. Total gate charge (Qg) is typically 34nC at VDD = 50V, ID = 13A, and VGS = 10V. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-252 (DPAK) surface-mount package.

Feature Summary

Features 100% unclamped inductive switching capability for enhanced reliability.
Low RDS(ON) minimizes conduction power losses.
Low Qg reduces switching energy losses.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance requirements including RoHS directives and halogen-free status against project specifications. Ensure the TO-252 mechanical dimensions align with the target PCB footprint layout. Validate that the manufacturer's marking codes match the expected date code format.

Selection Notes

Select this component when high efficiency is required due to low on-resistance and fast switching characteristics. Consider the thermal resistance values for heat dissipation calculations based on the intended mounting conditions. Evaluate the pulsed drain current limits for transient load scenarios. Verify compatibility with standard gate drive voltages for optimal performance.

Part Context

This part belongs to the DMT10H series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities for modern power management applications. The TO-252 package provides a balance between current handling capacity and compact surface-mount integration.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-reference parameters such as BVDSS, RDS(ON), and package type before substitution.