DMT10H010LCT

$1.79

Description：MOSFET N-CH 100V 98A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:4c0d7007ddc1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 98A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMT10H010LCT

Overview

The DMT10H010LCT is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 98A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 6.9mΩ at VGS = 10V and ID = 13A, with a maximum of 9.5mΩ under the same conditions. Total gate charge (QG) is typically 58.4nC. Thermal characteristics include a junction-to-case thermal resistance (RθJC) of 0.9°C/W and a total power dissipation of 139W at TC = +25°C. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Features low input capacitance for fast switching performance.
High BVDSS rating suitable for demanding power applications.
Low input and output leakage currents.
100% unclamped inductive switching (UIS) tested in production.

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific datasheet revision (DS37976 Rev. 6) against the manufacturer's official documentation before finalizing designs. Confirm that the TO220AB through-hole package aligns with the intended PCB layout requirements. Ensure compliance with RoHS 3 and REACH directives as specified in the product marking information. Cross-reference the JEDEC qualification status if high reliability standards are required for the target application environment.

Selection Notes

Select this component when a robust N-channel MOSFET with high current handling capability is needed for through-hole implementations. The TO220AB package provides effective thermal management for power dissipation up to 139W at case temperature. Consider the 100V breakdown voltage and low RDS(ON) for efficiency in DC-DC conversion or motor drive circuits where UIS robustness is critical for system longevity.

Part Context

This part belongs to the DMT10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology housed in a standard TO220AB plastic package. The device is designed for general-purpose power switching applications requiring high reliability and low conduction losses. It is distinct from automotive-grade variants which carry specific suffixes and certifications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

FAQ

Is the DMT10H010LCT qualified for automotive applications?

No, this specific part number is not qualified for automotive applications. For automotive use, parts qualified to AEC-Q100/101/200 with PPAP capability must be selected.