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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT10H014LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 100 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a maximum on-resistance (R_DS(ON)) of 15 mΩ at V_GS = 10 V and 18 mΩ at V_GS = 6.0 V, supporting continuous drain currents of 8.9 A and 7.9 A respectively. Key dynamic parameters include a total gate charge (Q_g) of 33.3 nC, turn-on delay time of 6.5 ns, and fall time of 8.1 ns. Thermal characteristics specify a junction-to-ambient resistance of 100 °C/W with a power dissipation of 1.2 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state losses while maintaining superior switching performance through low input capacitance and fast switching speed.
- Qualified to AEC-Q101 standards for high reliability in automotive applications.
- Manufactured using totally lead-free materials that are fully RoHS compliant and halogen/antimony free.
Applications
- Notebook battery power management
- Load switch circuits
- Backlighting systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the SO-8 case packaged in tape and reel quantities of 2,500 units. Confirm compliance requirements such as RoHS and AEC-Q101 qualification against current project specifications. Ensure the procurement channel is authorized to avoid counterfeit components. Check for any recent product change notices or lifecycle status updates from Diodes Incorporated prior to finalizing orders.
Selection Notes
Select this component when a 100 V N-channel MOSFET is required for space-constrained designs utilizing an SO-8 package. It is suitable for applications demanding low conduction losses at both 10 V and 6 V gate drive levels. Consider its thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area. Evaluate the gate charge and switching speeds against the driving circuit capabilities to ensure efficient operation.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize advanced silicon technology to achieve low R_DS(ON) values. The 'LSS' designation indicates the SO-8 surface mount package configuration. The '-13' suffix specifically denotes the standard tape and reel packaging format used for automated assembly processes.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
