DMT10H015LFG-13

$1.38

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:229c0f1bfd74 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT10H015LFG-13

Overview

The DMT10H015LFG-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum on-resistance of 13.5mΩ at VGS=10V and 42A continuous drain current at TC=+25°C. The device offers low gate charge and high avalanche energy rating, designed for efficient power management.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance
Small form factor thermally efficient package enables higher density end products
100% UIS (Avalanche) rated for robust operation under transient conditions

Applications

Synchronous rectifiers
Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required packing quantity and carrier type during procurement. Confirm that the component meets all applicable RoHS and environmental compliance standards relevant to your region before finalizing orders. Ensure storage and handling procedures adhere to moisture sensitivity level requirements specified in the datasheet.

Selection Notes

Select this component when board space is limited due to its compact PowerDI3333-8 package. Consider the thermal resistance characteristics for heat dissipation requirements in high-density designs. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching speeds and efficiency in the target application circuit.

Part Context

This part belongs to Diodes Incorporated's line of N-channel MOSFETs optimized for power management. It utilizes advanced technology to achieve low RDS(ON) and excellent figure of merit. The product is qualified to JEDEC standards for high reliability and is available in lead-free, halogen-free packaging.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade (Q-suffix) part listed on the manufacturer's website. Verify pinout compatibility and electrical specifications before substituting with other MOSFETs from different manufacturers or families.

FAQ

Is the DMT10H015LFG-13 suitable for automotive applications?

This part is qualified to JEDEC standards for high reliability. For automotive applications requiring specific change control, such as AEC-Q qualification, please refer to the related automotive grade (Q-suffix) part.