ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMT10H015LFG-7 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a maximum drain-source on-resistance of 13.5mΩ at VGS=10V and 20A, with a continuous drain current rating of 42A at TC=+25°C. The device has a gate-source voltage limit of ±20V, total gate charge of 33.3nC, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced technology designed for high-efficiency power management applications
- Small form factor thermally efficient package enabling higher density end products
- Occupies just 33% of the board area occupied by SO-8 packages
- 100% UIS (Avalanche) rated for robust performance
Applications
- Synchronous rectifiers
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's quality definitions. Ensure the selected variant matches the required thermal and electrical characteristics for the intended application environment.
Selection Notes
Select this component when a compact footprint is critical, as it occupies significantly less board area than traditional SO-8 packages. Consider its low on-state resistance and excellent switching performance for high-efficiency designs. Evaluate the thermal resistance values to ensure adequate heat dissipation for the expected load conditions and ambient temperatures.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series utilizes advanced silicon technology to support high-density power management solutions in modern electronic systems.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes qualified to AEC-Q standards. Verify pinout compatibility and electrical parameters before substituting with other MOSFETs in similar voltage and current ratings.
